Description
Jun 15, 2016 STF5N60M2 . N-channel 600 V, 1.3 typ., 3.5 A MDmesh M2. Power MOSFET in a TO-220FP package. Datasheet - production data. Semiconductor. Fairchild. Semiconductor. IPA60R1K5CE. STF5N60M2 . NCE60R1K2F. TK5A60D. CS6N60F A9TY. SVF6N60F. MDF6N60BTH. IPA60R1K0CE. Semiconductor chip. NCE Micro- and. Nanotechnology. Silikron Sem. IPA60R1K5CE. STF5N60M2 . NCE60R1K2F. IPA60R1K0CE. STF7NM60N. STF7N60M2. MagnaChip. Semiconductor chip. NCE Micro- and. Nanotechnology. Silikr. Semicon. IPA60R1K5CE. STF5N60M2 . NCE60R1K2F. IPA60R1K0CE. STF7NM60N.
Part Number | STF5N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 3.7A TO220FP |
Series | MDmesh,II Plus |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 165pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 20W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.85A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FP |
Package / Case | TO-220-3 Full Pack |
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STF5N60M2
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