Part Number | STF33N60DM2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | N-CHANNEL 600 V, 0.105 OHM TYP., |
Series | MDmesh,DM2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 24A |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | - |
Package / Case | 3-SIP |
Image |
STF33N60DM2
STMicroel
5391
0.72
MY Group (Asia) Limited
STF33N60DM2
STMICROELECT
6844
1.8575
LYT (HONGKONG) CO., LIMITED
STF33N60DM2
ST/MICRON
5512
2.995
HK XINYI COMPONENTS ASIA CO., LIMITED
STF33N60DM2
ST
2279
4.1325
Riking Technology (HK) Co., Limited
STF33N60DM2
STMicroelectronics
8291
5.27
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED