Description
STB21N65M5, STF21N65M5 . STI21N65M5, STP21N65M5, STW21N65M5. N- channel 650 V, 0.150 , 17 A MDmesh V Power MOSFET. D PAK, TO-220FP Mar 14, 2017 STF21N65M5 . N-channel 650 V, 0150 , 17 A MDmesh V Power. MOSFET, TO-220FP. TM Boost inductor. L=160uH - with auxiliary winding. Jun 7, 2016 Mfr Site. Date. STF21N65M5 . TSFP*M5F5B52. A. SHENZHEN B/E. 2016-06-07. Amount. UoM. Unit type. ST ECOPACK Grade. 1900.00 mg. HEAT-SINK. HS2. HEAT-SINK. R21. 100K. R21. 100K. D6. LL4148. D6. LL4148. 2. 1. 3. Q1. STF21N65M5 . Q1. STF21N65M5 . Z1. PCB REV. 1. Z1. PCB REV. 1. STF21N65M5 . TO-220FP. N-CHANNEL POWER MOSFET. STMICROELECTRONICS. R1. 750K. 1206. SMD STANDARD FILM RES - 1/4W - 5% - 250ppm/ C.
Part Number | STF21N65M5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 17A TO-220FP |
Series | MDmesh,V |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1950pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 30W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 8.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FP |
Package / Case | TO-220-3 Full Pack |
Image |
STF21N65M5
STMicroel
6000
1.38
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STF21N65M5
STMICROELECT
550
2.895
Gallop Great Holdings (Hong Kong) Limited
STF21N65M5
ST/MICRON
20000
4.41
HK XINYI COMPONENTS ASIA CO., LIMITED
STF21N65M5
ST
180
5.925
SUNTOP SEMICONDUCTOR CO., LIMITED
STF21N65M5
STMicroelectronics
2896
7.44
Belt (HK) Electronics Co