Part Number | STD6NM60N-1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 4.6A IPAK |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 920 mOhm @ 2.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
STD6NM60N-1
STMicroel
1000
0.78
MY Group (Asia) Limited
STD6NM60N-1
STMICROELECT
22015
1.75
Gallop Great Holdings (Hong Kong) Limited
STD6NM60N-1
ST/MICRON
39015
2.72
Corechips Co., Limited
STD6NM60N-1
ST
22200
3.69
XINZAN TECHNOLOGY LIMITED
STD6NM60N-1
STMicroelectronics
312068
4.66
Cicotex Electronics (HK) Limited