STMicroelectronics

Description

STP3NK60Z - STP3NK60ZFP. STB3NK60Z- STD3NK60Z - STD3NK60Z -1. N- CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAK. Zener-Protected SuperMESH Power MOSFET s. TYPICAL RDS(on) = 3.3 s. EXTREMELY HIGH dv/dt CAPABILITY s. 100% AVALANCHE TESTED s. GATE CHARGE MINIMIZED. Aug 1, 2014 Terminal Base Alloy. Comment. Not Applicable ; if coating is used or other bulk. Tin (Sn), matte, annealed. Copper Alloy. Package Designator. Size. Nbr of instances. Shape. DIP. 6.1 - 6.5 - 2.3. 3. Through-hole. Comment. Manufacturing information. Package: IPAK TO-251; MDF valid for STD3NK60Z -1. May 15, 2013 To set the output voltage with greater accuracy, fine-tuning is required. D23. BZX384-C30; SOD323. BZX384-C30. NXP Semiconductors. IC1. TEA1721; SO7. TEA1721AT. NXP Semiconductors. L1. 2 25 mH; 80 mA; 500 V (AC). 744862250. W rth Elektronik. L2. 1 mH; 80 mA. -. -. Q1. STD3NK60Z ; IPAK. Sheet No.: OP13025EN. 12. Test Circuit. 13. Application circuit example. 35.5V 180mA. AC Input. (N.C). CMF03. D4. 100k. R13. 4.7nF. C4. (Sec). 100k (3216). R20. (Pri). T1. VCC. 8. 1.0uF. C11. 22 (1608). R3. 10uF 50V. Cvcc. 1SS355 (90V) . D2. 0.33uF. C9. STD3NK60Z 600V 3.3ohm. Q1. 3.6. Rcs (R11). 150uF 50V. Cout.