Part Number | STB7ANM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V DPAK |
Series | MDmesh,II |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250mA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 363pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 2.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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STB7ANM60N
STMicroel
972
0.49
NEW IDEAS INDUSTRIAL CO., LIMITED
STB7ANM60N
STMICROELECT
7569
1.6025
Hong Kong YST Electronics Co., Limited
STB7ANM60N
ST/MICRON
1324
2.715
STH Electronics Co.,Ltd
STB7ANM60N
ST
1075
3.8275
CIS Ltd (CHECK IC SOLUTION LIMITED)
STB7ANM60N
STMicroelectronics
3705
4.94
Kunlida Electronics (HK) Limited