Part Number | STB6NK60Z-1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 6A I2PAK |
Series | SuperMESH |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 905pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STB6NK60Z-1
STMicroel
1785
1.15
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STM STB6NK60Z-1
STMICROELECT
99999
2.1525
Rui Xin Da Electronic Hong Kong Co., Limited
STB6NK60Z-1
ST/MICRON
13429
3.155
Senyes Electronic (HK) Limited
STB6NK60Z-1
ST
9000
4.1575
HK ZEKENG TRADING LIMITED
STB6NK60Z-1
STMicroelectronics
7857
5.16
Belt (HK) Electronics Co