Part Number | STB33N60DM2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 24A |
Series | MDmesh,DM2 |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
STB33N60DM2
STMicroel
13429
0.53
Senyes Electronic (HK) Limited
STB33N60DM2
STMICROELECT
57137
1.365
N&S Electronic Co., Limited
STB33N60DM2
ST/MICRON
61000
2.2
CIS Ltd (CHECK IC SOLUTION LIMITED)
STB33N60DM2
ST
13000
3.035
N&S Electronic Co., Limited
STB33N60DM2
STMicroelectronics
77989
3.87
Kunlida Electronics (HK) Limited