Part Number | STB26NM60ND |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 21A D2PAK |
Series | FDmesh,II |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 54.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1817pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 10.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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STB26NM60ND
STMicroel
8765
0.07
ONSTAR ELECTRONICS CO., LIMITED
STB26NM60ND
STMICROELECT
13429
0.945
Senyes Electronic (HK) Limited
STB26NM60ND
ST/MICRON
15000
1.82
Bonase Electronics (HK) Co., Limited
STB26NM60ND IC
ST
20077
2.695
NEW IDEAS INDUSTRIAL CO., LIMITED
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STMicroelectronics
39860
3.57
CIS Ltd (CHECK IC SOLUTION LIMITED)