Part Number | STB26NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 20A D2PAK |
Series | MDmesh,II |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 10A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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STB26NM60N
STMicroel
12800
0.98
Sunton Electronics Co., Limited
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STMICROELECT
7500
2.075
Gallop Great Holdings (Hong Kong) Limited
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ST/MICRON
20000
3.17
HK XINYI COMPONENTS ASIA CO., LIMITED
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ST
99999
4.265
Rui Xin Da Electronic Hong Kong Co., Limited
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5.36
Belt (HK) Electronics Co