Part Number | STB21NM60N-1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 17A I2PAK |
Series | MDmesh |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 220 mOhm @ 8.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STB21NM60N-1
STMicroel
950
0.04
Gallop Great Holdings (Hong Kong) Limited
STB21NM60N-1
STMICROELECT
1045
0.7325
E-Core Electronics Co.
STB21NM60N-1
ST/MICRON
14940
1.425
N&S Electronic Co., Limited
STB21NM60N-1
ST
7510
2.1175
ONSTAR ELECTRONICS CO., LIMITED
STB21NM60N-1
STMicroelectronics
25890
2.81
N&S Electronic Co., Limited