Part Number | STB20NM60-1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 20A I2PAK |
Series | MDmesh |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 192W (Tc) |
Rds On (Max) @ Id, Vgs | 290 mOhm @ 10A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STB20NM60-1
STMicroel
105
0.07
Yingxinyuan INT'L (Group) Limited
STB20NM60-1
STMICROELECT
8473
1.3325
ATLANTIC TECHNOLOGY LIMITED
STB20NM60-1
ST/MICRON
1850
2.595
CIS Ltd (CHECK IC SOLUTION LIMITED)
STB20NM60-1
ST
850
3.8575
HK HEQING ELECTRONICS LIMITED
STB20NM60-1
STMicroelectronics
3260
5.12
ONSTAR ELECTRONICS CO., LIMITED