Part Number | STB11NM60FDT4 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 11A D2PAK |
Series | FDmesh |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 160W (Tc) |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 5.5A, 10V |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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STB11NM60FDT4
STMicroel
660
0.27
Gallop Great Holdings (Hong Kong) Limited
STB11NM60FDT4
STMICROELECT
20000
1.315
HK XINYI COMPONENTS ASIA CO., LIMITED
STB11NM60FDT4
ST/MICRON
12500
2.36
Bonase Electronics (HK) Co., Limited
STB11NM60FDT4
ST
36500
3.405
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
STB11NM60FDT4
STMicroelectronics
8000
4.45
HK GRONICE ELECTRONIC TECHNOLOGY LIMITED