Part Number | STB11N65M5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N CH 650V 9A D2PAK |
Series | MDmesh,V |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 644pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 85W (Tc) |
Rds On (Max) @ Id, Vgs | 480 mOhm @ 4.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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STB11N65M5
STMicroel
40
1.43
Gallop Great Holdings (Hong Kong) Limited
STB11N65M5
STMICROELECT
13429
2.28
Senyes Electronic (HK) Limited
STB11N65M5
ST/MICRON
8712
3.13
ONSTAR ELECTRONICS CO., LIMITED
STB11N65M5
ST
5500
3.98
Top Electronics Co.,
STB11N65M5
STMicroelectronics
7539
4.83
ATLANTIC TECHNOLOGY LIMITED