Part Number | STB100N6F7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 60V 100A F7 D2PAK |
Series | STripFET,F7 |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1980pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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STB100N6F7
STMicroel
2002
0.07
HK HEQING ELECTRONICS LIMITED
STB100N6F7
STMICROELECT
148
1.5575
Gallop Great Holdings (Hong Kong) Limited
STB100N6F7
ST/MICRON
100000
3.045
VBsemi Electronics Co., Limited
STB100N6F7
ST
2002
4.5325
Corechips Co., Limited
STB100N6F7
STMicroelectronics
23002
6.02
N&S Electronic Co., Limited