Description
MOSFET 2N-CH 60V 5.4A 8SOIC Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 5.4A Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) @ Vds: 470pF @ 25V Power - Max: 4W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | SQ9945BEY-T1-GE3 |
Brand | STMicroelectronics |
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SQ9945BEY-T1-GE3
STMicroel
15897
0.49
HK HEQING ELECTRONICS LIMITED
SQ9945BEY-T1-GE3
STMICROELECT
53524
0.7625
Gallop Great Holdings (Hong Kong) Limited
SQ9945BEY-T1-GE3
ST/MICRON
319587
1.035
Cicotex Electronics (HK) Limited
SQ9945BEY-T1-GE3
ST
2000
1.3075
Hong Kong In Fortune Electronics Co., Limited
SQ9945BEY-T1-GE3
STMicroelectronics
4868000
1.58
Shenzhen WTX Capacitor Co., Ltd.