Description
Sep 27, 2011 SPW11N80C3 . CoolMOS. TM. Power Transistor. Features. New revolutionary high voltage technology. Extreme dv/dt rated. High peak SPA11N80C3. SPW11N80C3 . 290. SPP17N80C3. SPA17N80C3. SPW17N80C3. SPB17N80C3. 85. SPW55N80C3. 800V CoolMOS C3 Product Portfolio. IPW60R045CP. SPW11N60CFD. SPW15N60CFD. SPW20N60CFD. SPW24N60CFD. SPW35N60CFD. SPW47N60CFD. SPW11N80C3 . SPW17N60C3. 49.0. SPW11N80C3 . 0.29 . 17A. SPD17N80C3. SPP17N80C3. SPA17N80C3. SPW17N80C3. SOT-223. T0-252. D-PAK. TO-251. I-PAK. TO-263. D2-PAK. TO- 220.
Part Number | SPW11N80C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 800V 11A TO-247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 680µA |
Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 156W (Tc) |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 7.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
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