STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

Rated (5/5) based on 16 customer reviews

Description

Sep 27, 2011 SPW11N80C3 . CoolMOS. TM. Power Transistor. Features. New revolutionary high voltage technology. Extreme dv/dt rated. High peak SPA11N80C3. SPW11N80C3 . 290. SPP17N80C3. SPA17N80C3. SPW17N80C3. SPB17N80C3. 85. SPW55N80C3. 800V CoolMOS C3 Product Portfolio. IPW60R045CP. SPW11N60CFD. SPW15N60CFD. SPW20N60CFD. SPW24N60CFD. SPW35N60CFD. SPW47N60CFD. SPW11N80C3 . SPW17N60C3. 49.0. SPW11N80C3 . 0.29 . 17A. SPD17N80C3. SPP17N80C3. SPA17N80C3. SPW17N80C3. SOT-223. T0-252. D-PAK. TO-251. I-PAK. TO-263. D2-PAK. TO- 220.

Part Number SPW11N80C3
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 800V 11A TO-247
Series CoolMOS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Rds On (Max) @ Id, Vgs 450 mOhm @ 7.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.03   Highest Price: $5.31
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Part Number:

SPW11N80C3

Brand:

STMicroelectronics

D/C:
Qty:

240

Price (USD):

5.31

Company:

Shenzhen Aric Electronics Company

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Company
Part Number:

SPW11N80C3

Brand:

STMicroel

D/C:
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5680

Price (USD):

1.03

Company:

HK HEQING ELECTRONICS LIMITED

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Part Number:

SPW11N80C3 MOS

Brand:

STMICROELECT

D/C:
20+
Qty:

21639

Price (USD):

2.1

Company:

Ysx Tech Co., Limited

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Part Number:

SPW11N80C3

Brand:

ST/MICRON

D/C:
Qty:

133

Price (USD):

3.17

Company:

Gallop Great Holdings (Hong Kong) Limited

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Part Number:

SPW11N80C3

Brand:

ST

D/C:
Qty:

10000

Price (USD):

4.24

Company:

Belt (HK) Electronics Co

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SPW11N80C3 Ref.

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