Part Number | SPW11N60C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 11A TO-247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
SPW11N60C3
STMicroel
934
0.2
Useta Tech (HK) Limited
SPW11N60C3
STMICROELECT
8920
1.3825
HK HEQING ELECTRONICS LIMITED
SPW11N60C3
ST/MICRON
3462
2.565
Gallop Great Holdings (Hong Kong) Limited
SPW11N60C3
ST
5799
3.7475
Seven-Two Tech (HK) Co., Limited
SPW11N60C3
STMicroelectronics
5621
4.93
WIN AND WIN ELECTRONICS LIMITED