Part Number | SPU04N60C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 4.5A TO-251 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 2.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO251-3 |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
SPU04N60C3
STMicroel
22616
1.87
Useta Tech (HK) Limited
SPU04N60C3
STMICROELECT
14000
2.255
MY Group (Asia) Limited
SPU04N60C3
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10
2.64
Gallop Great Holdings (Hong Kong) Limited
SPU04N60C3
ST
4900
3.025
Belt (HK) Electronics Co
SPU04N60C3
STMicroelectronics
309286
3.41
Cicotex Electronics (HK) Limited