Part Number | SPD08N50C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 560V 7.6A DPAK |
Series | CoolMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 560V |
Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SPD08N50C3
STMicroel
16
0.33
Gallop Great Holdings (Hong Kong) Limited
SPD08N50C3
STMICROELECT
180
1.685
SUNTOP SEMICONDUCTOR CO., LIMITED
SPD08N50C3
ST/MICRON
2500
3.04
CHENGWING INTERNATIONAL LIMITED
SPD08N50C3
ST
3000
4.395
HONGKONG SINIKO ELECTRONIC LIMITED
SPD08N50C3
STMicroelectronics
3200
5.75
HongKong Trusang Technology Co.,Ltd