Part Number | SPD02N50C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 560V 1.8A DPAK |
Series | CoolMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 560V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.9V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 25W (Tc) |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SPD02N50C3
STMicroel
1000
0.77
MY Group (Asia) Limited
SPD02N50C3
STMICROELECT
2624
1.69
Belt (HK) Electronics Co
SPD02N50C3
ST/MICRON
5070
2.61
HK HEQING ELECTRONICS LIMITED
SPD02N50C3
ST
1400
3.53
Nosin (HK) Electronics Co.
SPD02N50C3 MOS()
STMicroelectronics
2770
4.45
CIS Ltd (CHECK IC SOLUTION LIMITED)