Description
Datasheet 2005-09-14. Rev. 2.5. Page 1. SPB07N60C3 . Cool MOS Power Transistor. VDS @ Tjmax. 650. V. RDS(on). 0.6. . ID. 7.3. A. Feature. New revolutionary 1. 2. 3. Material Content Data Sheet. Sales Product Name. SPB07N60C3 . Issued. 29. August 2013. MA#. MA000737442. Package. PG-TO263-3-2. Weight*. the rectifier assembly. The power semiconductors used are two CoolMOS SPB07N60C3 in parallel and a silicon carbide diode prototype SDD04S60 (4A/ 600V). 1.3. 9.5. SPB03N60C3. 3.2/2.0. 9.6. 1.4. 1.8. 13.0. SPB04N60C3. 4.5/2.8. 13 .5. 0.95. 2.6. 19.0. SPB07N60C3 . 7.3/4.6. 2. 1.9. 0.6. 4.0. 21.0. SPB11N60C3. 11/7.0 . SPB07N60C3 . SPB07N60C2. SPB07N60S5. SPB11N60C3. SPB11N60C2. SPB11N60S5. SPB20N60C3. SPB20N60C2. SPB20N60S5. SPP02N60C3.
Part Number | SPB07N60C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 7.3A D2PAK |
Series | CoolMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
SPB07N60C3
STMicroel
19801
0.49
Useta Tech (HK) Limited
SPB07N60C3
STMICROELECT
1000
1.7675
HK HEQING ELECTRONICS LIMITED
SPB07N60C3
ST/MICRON
569
3.045
Gallop Great Holdings (Hong Kong) Limited
SPB07N60C3
ST
4000
4.3225
Light International Technology CO., Limited
SPB07N60C3
STMicroelectronics
29
5.6
Yingxinyuan INT'L (Group) Limited