Description
2007-08-30. Rev. 3.0. Page 1. SPP20N65C3, SPA20N65C3 . SPI20N65C3. Cool MOS Power Transistor. V DS. 650. V. RDS(on). 0.19. . ID. 20.7. A. Feature. SPA20N65C3 . IPA65R190E6. SPI20N65C3. IPI65R190C6. SPW20N65C3. IPW65R190C6. 0.07 . SPW47N65C3. IPW65R070C61). 1) Available Q4 2011. Material Content Data Sheet. Sales Product Name. SPA20N65C3 . Issued. 28. August 2013. MA#. MA000737802. Package. PG-TO220-3-121. Weight*. 2242.51 SPA20N60C3. IPA60R165CP. IPA60R125CP. SPA07N60CFD. SPA11N60CFD. SPA15N60CFD. SPA20N60CFD. SPA07N65C3. SPA11N65C3. SPA20N65C3 .
Part Number | SPA20N65C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 20.7A TO-220 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 34.5W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 13.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 Full Pack |
Image |
SPA20N65C3
STMicroel
2156
0.2
UCAN TRADE (HK) LIMITED
SPA20N65C3
STMICROELECT
523
1.005
KWANGHUA TECHNOLOGY LIMITED
SPA20N65C3
ST/MICRON
4500
1.81
Hongkong Yunling Electronics Co.,Limited
SPA20N65C3
ST
4823
2.615
HK KK Int'l Co.,Limited
SPA20N65C3
STMicroelectronics
12081
3.42
FLOWER GROUP(HK)CO.,LTD