Description
MOSFET 2N-CH 30V 40A PWRPAIR Series: TrenchFET? FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 40A Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) @ Vds: 1260pF @ 15V Power - Max: 39W, 100W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?
Part Number | SIZ920DT-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 30V 40A PWRPAIR |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 40A |
Rds On (Max) @ Id, Vgs | 7.1 mOhm @ 18.9A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1260pF @ 15V |
Power - Max | 39W, 100W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-PowerPair |
Supplier Device Package | 6-PowerPair |
Image |
SIZ920DT-T1-GE3
STMicroel
12200
1.18
HK HEQING ELECTRONICS LIMITED
SIZ920DT-T1-GE3
STMICROELECT
140527
1.9775
Cicotex Electronics (HK) Limited
SIZ920DT-T1-GE3
ST/MICRON
7890
2.775
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIZ920DT-T1-GE3
ST
10768
3.5725
ATLANTIC TECHNOLOGY LIMITED
SIZ920DT-T1-GE3
STMicroelectronics
32317
4.37
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED