Part Number | SISS27ADNT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 30V 50A 1212-8 |
Series | TrenchFET Gen III |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 4660pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 57W (Tc) |
Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SISS27ADN-T1-GE3
STMicroel
4904
0.59
VIPOWER TECHNOLOGY LIMITED
SISS27ADN-T1-GE3
STMICROELECT
9851
1.6
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SiSS27ADN-T1-GE3
ST/MICRON
1750
2.61
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SiSS27ADN-T1-GE3
ST
7687
3.62
HK FEILIDI ELECTRONIC CO., LIMITED
SISS27ADN-T1-GE3
STMicroelectronics
9704
4.63
HXY Electronics (HK) Co.,Limited