Part Number | SIS430DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 25V 35A PPAK 1212-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 12.5V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SIS430DN-T1-GE3
STMicroel
280
1.17
Gallop Great Holdings (Hong Kong) Limited
SIS430DN-T1-GE3
STMICROELECT
35800
2.2
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIS430DN-T1-GE3
ST/MICRON
2940
3.23
HXY Electronics (HK) Co.,Limited
SiS430DN-T1-GE3
ST
36695
4.26
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SIS430DNT1GE3
STMicroelectronics
14000
5.29
CIS Ltd (CHECK IC SOLUTION LIMITED)