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Description
SiS412DN . New Product. Document Number: 69006. S09-0135-Rev. C, 02-Feb- 09 www.vishay.com. 1. N-Channel 30-V (D-S) MOSFET. FEATURES. SPICE Device Model SiS412DN www.vishay.com. Vishay Siliconix. S13-1521- Rev. B, 01-Jul-13. 1. Document Number: 64580. THIS DOCUMENT IS SUBJECT Oct 27, 2008 DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical SiS412DN . Single 30 V N-Channel. Power MOSFET. Features. Thermally enhanced PowerPAK 1212-8 package. Maximum on-resistance down to 0.024 . SiS412DN -T1-GE3. NEW. N-Channel 30-V (D-S) MOSFET. Rdson= 30m ohm @ Vgs= 4.5V. Id= 12A, Qg(typ)= 3.8nC. TrenchFET Power MOSF. Low RDSon
Part Number | SIS412DN |
Brand | STMicroelectronics |
Image | ![]() |
SiS412DN
STMicroel
50000
1.63
HK HEQING ELECTRONICS LIMITED
SIS412DN
STMICROELECT
93
2.5125
Gallop Great Holdings (Hong Kong) Limited
SIS412DN
ST/MICRON
12000
3.395
Cinty Int'l (HK) Industry Co., Limited
SIS412DN
ST
48000
4.2775
Yingxinyuan INT'L (Group) Limited
SIS412DN
STMicroelectronics
11020
5.16
CIS Ltd (CHECK IC SOLUTION LIMITED)