Part Number | SIS410DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 20V 35A PPAK 1212-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 10V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
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SiS410DN-T1-GE3
STMicroel
278
0.84
Gallop Great Holdings (Hong Kong) Limited
SiS410DN-T1-GE3
STMICROELECT
35800
1.395
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIS410DN-T1-GE3
ST/MICRON
43281
1.95
Hong Kong Yingweida Electronics Co., Ltd.
SiS410DN-T1-GE3
ST
289324
2.505
Cicotex Electronics (HK) Limited
SiS410DN-T1-GE3
STMicroelectronics
4868000
3.06
Shenzhen WTX Capacitor Co., Ltd.