Part Number | SIR850DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 25V 30A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1120pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 4.8W (Ta), 41.7W (Tc) |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
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SIR850DP-T1-GE3
STMicroel
1919
0.18
Gallop Great Holdings (Hong Kong) Limited
SIR850DP-T1-GE3
STMICROELECT
220360
1.0875
Cinty Int'l (HK) Industry Co., Limited
SIR850DP-T1-GE3
ST/MICRON
50000
1.995
Yingxinyuan INT'L (Group) Limited
SiR850DP-T1-GE3
ST
4868000
2.9025
Shenzhen WTX Capacitor Co., Ltd.
SIR850DP-T1-GE3
STMicroelectronics
2019
3.81
WIN AND WIN ELECTRONICS LIMITED