Part Number | SIR438DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 25V 60A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4560pF @ 10V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIR438DP-T1-GE3
STMicroel
8000
1.62
Gallop Great Holdings (Hong Kong) Limited
SIR438DP-T1-GE3
STMICROELECT
35800
2.18
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SiR438DP-T1-GE3
ST/MICRON
50000
2.74
Hong Kong Yingweida Electronics Co., Ltd.
SiR438DP-T1-GE3
ST
4868000
3.3
Shenzhen WTX Capacitor Co., Ltd.
SIR438DP-T1-GE3
STMicroelectronics
50000
3.86
Yingxinyuan INT'L (Group) Limited