Part Number | SIB417EDKT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 8V 9A SC75-6 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 565pF @ 4V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 5.8A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SC-75-6L Single |
Package / Case | PowerPAK SC-75-6L |
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SIB417EDK-T1-GE3
STMicroel
1000
0.18
MY Group (Asia) Limited
SIB417EDK-T1-GE3
STMICROELECT
300
0.8775
Hongkong Rixin International Trading Company
SIB417EDK-T1-GE3
ST/MICRON
28000
1.575
CP MICRO-ELECTRON (HK) INDUSTRIAL CO., LIMITED
SIB417AEDK-T1-GE3
ST
4788
2.2725
Hong Kong In Fortune Electronics Co., Limited
SIB417AEDK-T1-GE3
STMicroelectronics
15000
2.97
MY Group (Asia) Limited