Part Number | SIA417DJ-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 8V 12A SC70-6 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 4V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SC-70-6 Single |
Package / Case | PowerPAK SC-70-6 |
Image |
SIA417DJ-T1-GE3
STMicroel
50000
0.52
Gallop Great Holdings (Hong Kong) Limited
SIA417DJ-T1-GE3
STMICROELECT
42580
0.98
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIA417DJ-T1-GE3
ST/MICRON
259105
1.44
Cicotex Electronics (HK) Limited
SIA417DJ-T1-GE3
ST
14000
1.9
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIA417DJ-T1-GE3
STMicroelectronics
5226
2.36
WIN AND WIN ELECTRONICS LIMITED