STMicroelectronics

Ref. [hkinstmicroelectronics20220620][hkinbrandcloudAMpd]

Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

Rated (4/5) based on 14 customer reviews

Description

MOSFET 2N-CH 20V 8A 8-SOIC Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 8A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) @ Vds: 1200pF @ 10V Power - Max: 3.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO

Part Number SI9926CDY-T1-E3
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Arrays
Brand STMicroelectronics
Description MOSFET 2N-CH 20V 8A 8-SOIC
Series TrenchFET
Packaging Cut Tape (CT)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 18 mOhm @ 8.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 10V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.83   Highest Price: $5.63
1 - 5 of 5 Record(s)

Hot Offer

Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

SI9926CDY-T1-E3

Brand:

STMicroelectronics

D/C:
11+
Qty:

507

Price (USD):

5.63

Company:

Yakesheng Elect Trade Co

Buy
Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

SI9926CDY-T1-E3

Brand:

STMicroel

D/C:
Qty:

18385

Price (USD):

1.83

Company:

HK HEQING ELECTRONICS LIMITED

Buy
Part Number:

SI9926CDY-T1-E3

Brand:

STMICROELECT

D/C:
Qty:

17485

Price (USD):

2.78

Company:

Gallop Great Holdings (Hong Kong) Limited

Buy
Part Number:

SI9926CDY-T1-E3

Brand:

ST/MICRON

D/C:
21+
Qty:

46000

Price (USD):

3.73

Company:

WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED

Buy
Part Number:

Si9926CDY-T1-E3

Brand:

ST

D/C:
2022
Qty:

4868000

Price (USD):

4.68

Company:

Shenzhen WTX Capacitor Co., Ltd.

Buy

SI9926CDYT1E3 Ref.

[hkinstmicroelectronics20220620][hkinbrandcloudAMpd]
Cached Page:404;https://stmicroelectronics.hkinventory.com:443/p/details