Part Number | SI9926BDY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 20V 6.2A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.2A |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.2A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.14W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
SI9926BDY-T1-E3
STMicroel
4027
0.28
HK HEQING ELECTRONICS LIMITED
SI9926BDY-T1-E3
STMICROELECT
3045
1.275
SUNTOP SEMICONDUCTOR CO., LIMITED
SI9926BDY-T1-E3
ST/MICRON
973
2.27
Shenzhen WTX Capacitor Co., Ltd.
SI9926BDY-T1-E3
ST
4293
3.265
Cicotex Electronics (HK) Limited
SI9926BDY-T1-E3
STMicroelectronics
7355
4.26
Analog Technology Limited