Description
May 18, 2009 Ordering Information: Si9410BDY - T1 - E3 (Lead (Pb)-free). Si9410BDY - T1 - GE3 ( Lead (Pb)-free and Halogen-free). D. G. S. N-Channel Nov 9, 2006 Si9410BDY - T1 - E3 (Lead (Pb)-free version) Replaces Si9410DY-T1. NS denotes parameter not specified in original data sheet. Specification Single. 30. 25. 0.0185. 0.03. 9. 8.7b. 2.5. Si4804BDY. Dual. 30. 20. 0.022. 0.03. 7.5. 7. 2. Si4802DY. Single. 30. 20. 0.022. 0.03. 8.4. 13. 2.5. Si9410BDY . Single.
Part Number | SI9410BDYT1E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 6.2A 8SOIC |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 8.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
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