Part Number | SI9407BDY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 60V 4.7A 8-SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 5W (Tc) |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 3.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI9407BDY-T1-E3
STMicroel
5814
1.15
Gallop Great Holdings (Hong Kong) Limited
SI9407BDY-T1-E3
STMICROELECT
3100
2.4125
Shenzhen WTX Capacitor Co., Ltd.
SI9407BDY-T1-E3
ST/MICRON
4369
3.675
Yingxinyuan INT'L (Group) Limited
SI9407BDY-T1-E3
ST
3234
4.9375
Nosin (HK) Electronics Co.
SI9407BDY-T1-E3
STMicroelectronics
2951
6.2
KEMING ELECTRONICS DEVELOPMENT CO., LIMITED