Part Number | SI8902EDB-T2-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 20V 3.9A 6-MFP |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.9A |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 1V @ 980µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-MICRO FOOTCSP |
Supplier Device Package | 6-Micro Foot |
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SI8902EDB-T2-E1
STMicroel
2018
0.02
HK HEQING ELECTRONICS LIMITED
SI8902EDB-T2-E1
STMICROELECT
3658
0.9925
Cicotex Electronics (HK) Limited
SI8902EDB-T2-E1
ST/MICRON
5477
1.965
Hong Kong Capital Industrial Co.,Ltd
SI8902EDB-T2-E1
ST
1455
2.9375
Yuhua Technology Co.,Limited
SI8902EDB-T2-E1
STMicroelectronics
3647
3.91
Dan-Mar Components Inc.