Description
MOSFET 2P-CH 20V 3.5A 6-MFP Series: TrenchFET? FET Type: 2 P-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 3.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1V @ 350米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: - Power - Max: 1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-MICRO FOOT?CSP Supplier Device Package: 6-Micro Foot?
Part Number | SI8901EDB-T2-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2P-CH 20V 3.5A 6-MFP |
Series | TrenchFET |
Packaging | |
FET Type | 2 P-Channel (Dual) Common Drain |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.5A |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 1V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-MICRO FOOTCSP |
Supplier Device Package | 6-Micro Foot |
Image |
SI8901EDB-T2-E1
STMicroel
2010
0.95
Yingxinyuan INT'L (Group) Limited
SI8901EDB-T2-E1
STMICROELECT
3000
2.5
Nosin (HK) Electronics Co.
SI8901EDB-T2-E1
ST/MICRON
3800
4.05
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI8901EDB-T2-E1
ST
2800
5.6
HK HEQING ELECTRONICS LIMITED
SI8901EDB-T2-E1
STMicroelectronics
3000
7.15
Kunlida Electronics (HK) Limited