Part Number | SI8435DB-T1-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 20V 10A 2X2 4-MFP |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.78W (Ta), 6.25W (Tc) |
Rds On (Max) @ Id, Vgs | 41 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-XFBGA, CSPBGA |
Image |
SI8435DB-T1-E1
STMicroel
6185
1.33
Dedicate Electronics (HK) Limited
SI8435DB-T1-E1
STMICROELECT
1000
2.095
MY Group (Asia) Limited
SI8435DB-T1-E1
ST/MICRON
750
2.86
AIC Semiconductor Co., Limited
SI8435DB-T1-E1
ST
210
3.625
HongKong Wanghua Technology Limited
SI8435-B-ISR
STMicroelectronics
1044
4.39
JFJ Electronics Co.,Limited