Description
MOSFET 2N-CH 60V 6.2A PPAK SO-8 Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 6.2A Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.4W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual
Part Number | SI7960DP-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 60V 6.2A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 6.2A |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 9.7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SO-8 Dual |
Supplier Device Package | PowerPAK SO-8 Dual |
Image |
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