Description
MOSFET 2N-CH 20V 6A PPAK 1212-8 Series: TrenchFET? FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 6A Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250米A Gate Charge (Qg) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.5W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual
Part Number | SI7900AEDN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 20V 6A PPAK 1212-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 8.5A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK 1212-8 Dual |
Supplier Device Package | PowerPAK 1212-8 Dual |
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SI7900AEDN-T1-GE3
STMicroel
1962
0.45
HK HEQING ELECTRONICS LIMITED
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28000
1.305
Gallop Great Holdings (Hong Kong) Limited
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ST/MICRON
55200
2.16
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
Si7900AEDN-T1-GE3
ST
4868000
3.015
Shenzhen WTX Capacitor Co., Ltd.
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296395
3.87
Cicotex Electronics (HK) Limited