Part Number | SI7892BDP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 15A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 3775pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
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SI7892BDP-T1-GE3
STMicroel
8985
0.9
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7892BDP-T1-GE3
STMICROELECT
50000
2.14
Yingxinyuan INT'L (Group) Limited
SI7892BDP-T1-GE3
ST/MICRON
3561
3.38
Wonston Electronics Limited
SI7892BDP-T1-GE3
ST
18000
4.62
Ande Electronics Co., Limited
SI7892BDP-T1-GE3
STMicroelectronics
1000
5.86
MY Group (Asia) Limited