Description
MOSFET 2N-CH 30V 6.4A PPAK SO-8 Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.4A Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250米A Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.4W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual
Part Number | SI7844DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 30V 6.4A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.4A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SO-8 Dual |
Supplier Device Package | PowerPAK SO-8 Dual |
Image |
SI7844DP-T1-GE3
STMicroel
8000
0.16
MY Group (Asia) Limited
SI7844DP-T1-GE3
STMICROELECT
36160
0.735
IC Chip Co., Ltd.
SI7844DP-T1-GE3
ST/MICRON
50000
1.31
Yingxinyuan INT'L (Group) Limited
SI7844DP-T1-GE3
ST
62338
1.885
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SI7844DP-T1-GE3
STMicroelectronics
6389
2.46
CIS Ltd (CHECK IC SOLUTION LIMITED)