Part Number | SI7820DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 200V 1.7A 1212-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 2.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SI7820DN-T1-GE3
STMicroel
8702
1.49
KYO Inc.
SI7820DN-T1-GE3
STMICROELECT
3872
2.26
Gallop Great Holdings (Hong Kong) Limited
Si7820DN-T1-GE3
ST/MICRON
3444
3.03
Shenzhen WTX Capacitor Co., Ltd.
SI7820DN-T1-GE3
ST
1832
3.8
Yingxinyuan INT'L (Group) Limited
SI7820DN-T1-GE3
STMicroelectronics
9787
4.57
Cicotex Electronics (HK) Limited