Part Number | SI7810DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V 3.4A 1212-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 62 mOhm @ 5.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SI7810DN-T1-GE3
STMicroel
8969
0.06
HK HEQING ELECTRONICS LIMITED
Si7810DN-T1-GE3
STMICROELECT
4868000
0.945
Shenzhen WTX Capacitor Co., Ltd.
SI7810DN-T1-GE3
ST/MICRON
50000
1.83
Yingxinyuan INT'L (Group) Limited
SI7810DN-T1-GE3
ST
170
2.715
Gallop Great Holdings (Hong Kong) Limited
Si7810DN-T1-GE3
STMicroelectronics
272260
3.6
Cicotex Electronics (HK) Limited