Part Number | SI7802DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 250V 1.24A 1212-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 1.24A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 435 mOhm @ 1.95A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
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SI7802DN-T1-GE3
STMicroel
8973
0.32
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7802DN-T1-GE3
STMICROELECT
2976
1.305
Nosin (HK) Electronics Co.
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ST/MICRON
41320
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Bonase Electronics (HK) Co., Limited
SI7802DN-T1-GE3
ST
1000
3.275
MY Group (Asia) Limited
SI7802DN-T1-GE3
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4.26
Global Chips Technology Co.LTD