Part Number | SI7366DP-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 20V 13A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.7W (Ta) |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
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SI7366DP-T1-E3
STMicroel
1123
0.55
Shenzhen WTX Capacitor Co., Ltd.
SI7366DP-T1-E3
STMICROELECT
4020
1.375
Cicotex Electronics (HK) Limited
SI7366DP-T1-E3
ST/MICRON
1452
2.2
Huajiaxin Electronic Technology (Hong Kong) Co., Limited
SI7366DP-T1-E3
ST
2549
3.025
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI7366DP-T1-E3
STMicroelectronics
3615
3.85
Innovation Best Electronics Technology Limited