Part Number | SI7120ADN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 60V 6A 1212-8 PPAK |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 9.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
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Si7120ADN-T1-GE3
STMicroel
50000
0.24
Hong Kong Yingweida Electronics Co., Ltd.
SI7120ADN-T1-GE3
STMICROELECT
125
1.2625
Semic Pte. Ltd
Si7120ADN-T1-GE3
ST/MICRON
57512
2.285
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7120ADN-T1-GE3
ST
11250
3.3075
Viassion Technology Co., Limited
SI7120ADN-T1-GE3
STMicroelectronics
2483
4.33
WIN AND WIN ELECTRONICS LIMITED