Part Number | SI7107DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 20V 9.8A 1212-8 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 450µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 10.8 mOhm @ 15.3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SI7107DN-T1-GE3
STMicroel
8280
0.15
Shinever Technology Limited
SI7107DN-T1-GE3
STMICROELECT
4208
1.815
Nosin (HK) Electronics Co.
SI7107DN-T1-GE3
ST/MICRON
5219
3.48
ATLANTIC TECHNOLOGY LIMITED
SI7107DN-T1-GE3
ST
7953
5.145
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7107DN-T1-GE3
STMicroelectronics
6586
6.81
Yingxinyuan INT'L (Group) Limited