Part Number | SI7107DN-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 20V 9.8A 1212-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 450µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 10.8 mOhm @ 15.3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
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SI7107DN-T1-E3
STMicroel
40
1.21
Rainstar Components USA Incorporated Limited
SI7107DN-T1-E3
STMICROELECT
271803
1.665
Cicotex Electronics (HK) Limited
SI7107DN-T1-E3
ST/MICRON
7841
2.12
ATLANTIC TECHNOLOGY LIMITED
SI7107DN-T1-E3
ST
5000
2.575
Gallop Great Holdings (Hong Kong) Limited
SI7107DN-T1-E3
STMicroelectronics
29390
3.03
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED